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專注專業(yè)務實創(chuàng)新技術致力于做國內(nèi)最大的功率半導體器件的供應商
1、產(chǎn)品可靠性測試項目
全系列產(chǎn)品依照 JEDEC and AEC101標準通過半導體功率器件的可靠性測試
| Test Iteam | Description | Test Condition | Duration | Ref.Standard |
| PC | 預處理 |
Pre-test & V/M TMCL -> Bake Soak (MSL 1) IR Reflow Post-test & V/M |
Pre &Post- test | JESD22-A113 |
| ACLV(PCT) | 高壓蒸煮試驗 |
TA=121°C / 100%RH, Gauge Pressure 15 psig ; Unbiased. |
24/96 Hours | JESD22-A102 |
| HTSL | 高溫貯存壽命試驗 |
TA=150°C, or specified maximum storage temperature. |
168/500/1000 Hours | JESD22-A103 |
| RSH | 耐焊熱試驗 |
TA=260°C, 10 Sec. (for SMD) TA=270°C, 7 Sec. (for Thr-Hole) |
1 Cycle |
JESD22-A111 JESD22-B106 |
| TMCL(TCH) | 高低溫溫度循環(huán)試驗 |
TA=-65°C to +150°C, dwell time 15min. (30min/cycle), Air to air |
100/500/1000 Cycles | JESD22-A104 |
| H3TRB(THB) | 高溫高濕反偏試驗 |
TA=85°C, 85%RH, 80% of rated BV ; or up to a maximum of 100V |
168/500/1000 Hours | JESD22-A101 |
| HTRB | 高溫反偏試驗 |
TA=150°C or specified max. Tj (T A is to be adjusted to compensate for leakage ) , 80% of rated BV |
168/500/1000 Hours | JESD22-A108 |
| HTGB |
高溫柵偏試驗(僅適用于MOSFET產(chǎn)品） |
TA=150°C or specified max. T； (T A is to be adjusted to compensate for leakage), 100% of rated VGS |
168/500/1000 Hours | JESD22-A108 |
| OPL | 工作壽命試驗 | TA=25°C, max. power rating or powered to max. Tj | 168/500/1000 Hours | JESD22-A108 |
| IOL | 間歇工作壽命試驗 | TA=25 0 C, ATj 2 100 〇 C, t 0N =t 0FF =2 min (or 3_5 min} | 2520/7500/15000 Cycles |
MIL-STD-750 Method 1037 |
2、產(chǎn)品可靠性測試報告
| Part Number | Reliability Test Report |
|---|---|
| DT8T35I |
|
| DT12T35I |
|
| DT16T35I |
|
| DT4T10F |
|
| DT16T35E |
|